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| SEMICONDUCTOR TECHNICAL DATA HIGH SPEED RECTIFICATION (SWITCHING REGULATORS, CONVERTERS, CHOPPERS) UNIVERSAL-USE RECTIFIERS. KDR731S SCHOTTKY BARRIER TYPE DIODE (SERIES CONNECTION) L E B L FEATURES Low Forward Voltage : VF max=0.55V A G DIM A 2 MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 Fast reverse recovery time (trr max=10nS) Low switching noise. Low leakage current and high reliablility due to Highly reliable planar structure. Series connection of 2 elements in an SOT-23 package facilitates high-density mounting and permits KDR731S applied equipment to be made smaller. 3 D B C D E G H J K H 1 P P L M N P C N M 3 1. CATHODE 1 2. ANODE 2 MAXIMUM RATING (Ta=25 CHARACTERISTIC Repetitive (Peak) Reverse Voltage Non-Repetitive (Peak) Reverse Surge Voltage Average Forward Current Surge Forward Current Junction Temperature Storage Temperature Range ) SYMBOL VRRM VRSM IO IFSM Tj Tstg RATING 30 35 70 2 125 -55 125 UNIT V V mA A 3. ANODE 1 / CATHODE 2 K J 2 1 SOT-23 Marking Lot No. Type Name UX ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Reverse Voltage Forward Voltage Reverse Current Total Capacitance Reverse Recovery Time VR VF IR CT trr ) TEST CONDITION IR=20 A IF=70mA VR=15V VR=10V, f=1MHz IR=IF=10mA MIN. 30 TYP. 5.0 MAX. 0.55 5 10 UNIT V V A pF nS SYMBOL 2003. 2. 25 Revision No : 1 1/2 KDR731S I F - VF 300 FORWARD CURRENT I F (mA) REVERSE CURRENT I R (A) 100 30 Ta =1 25 C Ta =7 5 C Ta= 25 C Ta= -25 C I R - VR 1K 100 10 1 0.1 0.01 Ta=125 C Ta=100 C Ta=75 C Ta=50 C Ta=25 C 10 3 1 0.3 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 5 10 15 20 25 30 35 FORWARD VOLTAGE VF (V) REVERSE VOLTAGE V R (V) C - VR SURGE FORWARD CURRENT I S(peak) (A) INTERTERMINAL CAPACITANCE C (pF) 20 f=1MHz IS - t 2.8 2.4 1s Current waveform 20ms t 50Hz sine wave 10 5 3 2.0 1.6 1.2 0.8 0.4 0 0.01 0.03 0.1 1 0.5 1 3 5 10 30 50 0.3 1 3 REVERSE VOLTAGE VR (V) TIME t (S) t rr TEST CIRCUIT Duty < 10% = 10mA 100 50 10mA 10s 10 1.0mA 5V t rr 2003. 2. 25 Revision No : 1 2/2 |
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